Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI2337DS-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 80V 2.2A SOT23-3
Product Attributes：
Part Number: SI2337DS-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 80V 2.2A SOT23-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2337DS-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 1.2KV 16A TO263AB
SCR DBL 2SCR 1600V 95A ADD-A-PAK
TVS DIODE 12.8VWM 21.2VC DO214AB
MOSFET N-CH 600V 3.6A TO220AB
MOSFET N-CH 40V 8A SOT23-3
Product Specifications：
MfrPart.: SI2337DS-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 80V 2.2A SOT23-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 80 VCurrent-ContinuousDrain(Id)@25°C: 2.2A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 270mOhm @ 1.2A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 17 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 500 pF @ 40 VFETFeature: -PowerDissipation(Max): 760mW (Ta), 2.5W (Tc)OperatingTemperature: -50°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: SOT-23-3 (TO-236)SI2337DS-T1-GE3 | Vishay | NHE Electronics
SI2337DS-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
