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SI2365EDS-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 5.9A TO236
Product Attributes：
Part Number: SI2365EDS-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 20V 5.9A TO236
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2365EDS-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI2365EDS-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 5.9A TO236Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 5.9A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 32mOhm @ 4A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 36 nC @ 8 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 1W (Ta), 1.7W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: SOT-23-3 (TO-236)SI2365EDS-T1-GE3 | Vishay | NHE Electronics
SI2365EDS-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
