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SI2392DS-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 3.1A SOT-23
Product Attributes:
Part Number: SI2392DS-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 100V 3.1A SOT-23
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2392DS-T1-GE3 Datasheet (PDF)
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Product Specifications:
MfrPart.: SI2392DS-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 100V 3.1A SOT-23Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 3.1A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 126mOhm @ 2A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 10.4 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 196 pF @ 50 VFETFeature: -PowerDissipation(Max): 1.25W (Ta), 2.5W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: SOT-23SI2392DS-T1-GE3 | Vishay | NHE Electronics
SI2392DS-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.