Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI3421DV-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 8A 6TSOP
Product Attributes：
Part Number: SI3421DV-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 8A 6TSOP
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI3421DV-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 9VWM 15.4VC DO214AA
DIODE ARRAY SCHOTTKY 45V TO220AB
MOSFET P-CH 200V 3.8A PPAK1212-8
FIXED IND 1.5UH 3.25A 75 MOHM
DIODE GEN PURP 800V 1A DO204AL
TVS DIODE 8.92VWM 16.2VC DO204AC
Product Specifications：
MfrPart.: SI3421DV-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 8A 6TSOPProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 8A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 19.2mOhm @ 7A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 69 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2580 pF @ 15 VFETFeature: -PowerDissipation(Max): 2W (Ta), 4.2W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 6-TSOPSI3421DV-T1-GE3 | Vishay | NHE Electronics
SI3421DV-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
