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SI3459BDV-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 60V 2.9A 6TSOP
Product Attributes：
Part Number: SI3459BDV-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 60V 2.9A 6TSOP
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI3459BDV-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI3459BDV-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 60V 2.9A 6TSOPProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 2.9A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 216mOhm @ 2.2A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 12 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 350 pF @ 30 VFETFeature: -PowerDissipation(Max): 2W (Ta), 3.3W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 6-TSOPSI3459BDV-T1-GE3 | Vishay | NHE Electronics
SI3459BDV-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
