Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI3481DV-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 4A 6TSOP
Product Attributes：
Part Number: SI3481DV-T1-E3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 4A 6TSOP
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI3481DV-T1-E3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 600V 15A TO220AC
TRIMMER 20K OHM 0.5W PC PIN TOP
TVS DIODE 120VWM 193VC DO214AB
DIODE ZENER 6.8V 1.25W DO214AC
DIODE GEN PURP 600V 6A D-PAK
THERMISTOR NTC 10KOHM 3977K BEAD
Product Specifications：
MfrPart.: SI3481DV-T1-E3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 4A 6TSOPProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 4A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 48mOhm @ 5.3A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 25 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 1.14W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 6-TSOPSI3481DV-T1-E3 | Vishay | NHE Electronics
SI3481DV-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
