Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI3493BDV-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 8A 6TSOP
Product Attributes：
Part Number: SI3493BDV-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 20V 8A 6TSOP
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI3493BDV-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 78VWM 125VC DO204AL
ADJ PWR RES 27 OHM 100W CHAS MT
SFERNICE POTENTIOMETERS & TRIMME
DIODE ZENER 30V 300MW SOT23-3
DIODE ZENER 22V 500MW DO220AA
ADJ PWR RES 15 OHM 280W CHAS MT
Product Specifications：
MfrPart.: SI3493BDV-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 8A 6TSOPProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 8A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 27.5mOhm @ 7A, 4.5VVgs(th)(Max)@Id: 900mV @ 250µAGateCharge(Qg)(Max)@Vgs: 43.5 nC @ 5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 1805 pF @ 10 VFETFeature: -PowerDissipation(Max): 2.08W (Ta), 2.97W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 6-TSOPSI3493BDV-T1-GE3 | Vishay | NHE Electronics
SI3493BDV-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
