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SI3867DV-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 3.9A 6TSOP
Product Attributes：
Part Number: SI3867DV-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 20V 3.9A 6TSOP
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI3867DV-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI3867DV-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 3.9A 6TSOPProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: TrenchFET®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 3.9A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 4.5VRdsOn(Max)@IdVgs: 51mOhm @ 5.1A, 4.5VVgs(th)(Max)@Id: 1.4V @ 250µAGateCharge(Qg)(Max)@Vgs: 11 nC @ 4.5 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 1.1W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 6-TSOPSI3867DV-T1-GE3 | Vishay | NHE Electronics
SI3867DV-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
