Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI4056ADY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 5.9A/8.3A 8SOIC
Product Attributes：
Part Number: SI4056ADY-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 100V 5.9A/8.3A 8SOIC
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4056ADY-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 160VWM 287VC DO214AA
DIODE ZENER 2.65V 960MW DO219AC
TVS DIODE 202VWM 360VC DO204AC
DIODE GEN PURP 400V 2A DO214AA
TVS DIODE 6VWM 11.4VC DO214AC
Product Specifications：
MfrPart.: SI4056ADY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 100V 5.9A/8.3A 8SOICProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 5.9A (Ta), 8.3A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): -RdsOn(Max)@IdVgs: 29.2mOhm @ 5.9A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 29 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1330 pF @ 50 VFETFeature: -PowerDissipation(Max): 2.5W (Ta), 5W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOICSI4056ADY-T1-GE3 | Vishay | NHE Electronics
SI4056ADY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
