Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI4101DY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 25.7A 8SO
Product Attributes：
Part Number: SI4101DY-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 25.7A 8SO
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4101DY-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ZENER 4.2V 600MW DO220AA
TVS DIODE 58.1VWM 92VC SMC
TVS DIODE 85.5VWM 137VC DO204AL
MOSFET 2N-CH 60V 6.1A PPAK SO-8
TVS DIODE 185VWM 328VC DO214AC
IC SWITCH 2XSPST 8 OHM 8MINIQFN
Product Specifications：
MfrPart.: SI4101DY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 25.7A 8SOProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 25.7A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 6mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 203 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 8190 pF @ 15 VFETFeature: -PowerDissipation(Max): 6W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOICSI4101DY-T1-GE3 | Vishay | NHE Electronics
SI4101DY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
