Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI4103DY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 14A/16A 8SO
Product Attributes：
Part Number: SI4103DY-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 14A/16A 8SO
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4103DY-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
MOSFET N-CHANNEL 30V 32A 8SOIC
DIODE ARRAY SCHOTTKY 100V TO220
RECTIFIER DIODE 90A 800V TO-247A
DIODE GEN PURP 600V 4A TO252
MOSFET P-CH 60V 20A TO252
FIXED IND 470NH 460MA 440MOHM SM
Product Specifications：
MfrPart.: SI4103DY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 14A/16A 8SOProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IIIPartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 14A (Ta), 16A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 7.9mOhm @ 10A, 10VVgs(th)(Max)@Id: 2V @ 250µAGateCharge(Qg)(Max)@Vgs: 140 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 5200 pF @ 15 VFETFeature: -PowerDissipation(Max): 2.5W (Ta), 5.2W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOSI4103DY-T1-GE3 | Vishay | NHE Electronics
SI4103DY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
