Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI4386DY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 11A 8SO
Product Attributes：
Part Number: SI4386DY-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 11A 8SO
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4386DY-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 47.8VWM 77VC DO214AC
DIODE GEN PURP 600V 1A DO214AC
TVS DIODE 9.4VWM 15.6VC DO204AL
DIODE ARRAY SCHOTTKY 100V TO263
SFERNICE POTENTIOMETERS & TRIMME
DIODE ZENER 7.48V 960MW DO219AC
Product Specifications：
MfrPart.: SI4386DY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 11A 8SOProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 11A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 7mOhm @ 16A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 18 nC @ 4.5 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 1.47W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOICSI4386DY-T1-GE3 | Vishay | NHE Electronics
SI4386DY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
