Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI4425FDY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 12.7/18.3A 8SOIC
Product Attributes：
Part Number: SI4425FDY-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4425FDY-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 1KV 16A DO203AA
DIODE GEN PURP 600V 1A DO204AC
DIODE ZENER 20V 1.25W DO214AC
DIODE ARRAY SCHOTTKY 35V TO220AB
OPTOISO 5KV TRANS W/BASE 6SMD
DIODE ZENER 15V 500MW DO35
Product Specifications：
MfrPart.: SI4425FDY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 12.7/18.3A 8SOICProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 12.7A (Ta), 18.3A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 9.5mOhm @ 10A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 41 nC @ 10 VVgs(Max): +16V, -20VInputCapacitance(Ciss)(Max)@Vds: 1620 pF @ 15 VFETFeature: -PowerDissipation(Max): 2.3W (Ta), 4.8W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOICSI4425FDY-T1-GE3 | Vishay | NHE Electronics
SI4425FDY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
