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SI4459BDY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 20.5A/27.8A 8SO
Product Attributes：
Part Number: SI4459BDY-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 20.5A/27.8A 8SO
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4459BDY-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI4459BDY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 20.5A/27.8A 8SOProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 20.5A (Ta), 27.8A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 4.9mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 84 nC @ 10 VVgs(Max): +20V, -16VInputCapacitance(Ciss)(Max)@Vds: 3490 pF @ 15 VFETFeature: -PowerDissipation(Max): 3.1W (Ta), 5.6W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOSI4459BDY-T1-GE3 | Vishay | NHE Electronics
SI4459BDY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
