Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI4688DY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 8.9A 8SO
Product Attributes：
Part Number: SI4688DY-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 8.9A 8SO
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4688DY-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE SCHOTTKY 60V 20A TO262
SENSOR REMOTE REC 38.0KHZ 45M
TVS DIODE 15.3VWM 25.2VC DO214AA
DIODE ZENER 7.5V 500MW MICROMELF
TXRX IRDA 4MBIT 4MM SIDE 8-SMD
Product Specifications：
MfrPart.: SI4688DY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 8.9A 8SOProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 8.9A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 11mOhm @ 12A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 38 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1580 pF @ 15 VFETFeature: -PowerDissipation(Max): 1.4W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOICSI4688DY-T1-GE3 | Vishay | NHE Electronics
SI4688DY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
