Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI4833ADY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 4.6A 8SO
Product Attributes:
Part Number: SI4833ADY-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 4.6A 8SO
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4833ADY-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 60VWM 96.8VC DO214AC
TVS DIODE 6.5VWM 11.2VC SMF
FIXED IND 5.6UH 14A 14.1MOHM SMD
IC MUX DUAL 4CHAN 16-SOIC
MOSFET 2N-CH 30V 5.5A 8-SOIC
MOSFET P-CH 200V 3.6A TO251AA
Product Specifications:
MfrPart.: SI4833ADY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 4.6A 8SOProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: LITTLE FOOT®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 4.6A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 72mOhm @ 3.6A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 15 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 750 pF @ 15 VFETFeature: Schottky Diode (Isolated)PowerDissipation(Max): 1.93W (Ta), 2.75W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOSI4833ADY-T1-GE3 | Vishay | NHE Electronics
SI4833ADY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.