Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI4833BDY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CHANNEL 30V 4.6A 8SOIC
Product Attributes：
Part Number: SI4833BDY-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CHANNEL 30V 4.6A 8SOIC
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4833BDY-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 6.8UH 5.6A 28 MOHM SMD
FIXED IND 1.3MH 61MA 49 OHM TH
FIXED IND 5.6UH 300MA 1.1OHM SMD
FIXED IND 4.7UH 2.8A 116.6 MOHM
DIODE ZENER 22V 1.5W DO214AA
TVS DIODE 36VWM 58.1VC DO215AB
Product Specifications：
MfrPart.: SI4833BDY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CHANNEL 30V 4.6A 8SOICProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: LITTLE FOOT®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 4.6A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 68mOhm @ 3.6A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 14 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 350 pF @ 15 VFETFeature: Schottky Diode (Isolated)PowerDissipation(Max): 2.75W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOICSI4833BDY-T1-GE3 | Vishay | NHE Electronics
SI4833BDY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
