Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI4835DDY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 13A 8SO
Product Attributes：
Part Number: SI4835DDY-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 13A 8SO
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4835DDY-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
SFERNICE POTENTIOMETERS & TRIMME
TVS DIODE 30.8VWM 49.9VC DO214AA
DIODE ZENER 6V 500MW SOD80
MOSFET P-CH 100V 120A TO220AB
ADJ PWR RES 27 OHM 280W CHAS MT
NTC LUG M4 10K 2% G24 38MM A
Product Specifications：
MfrPart.: SI4835DDY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 13A 8SOProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 13A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 18mOhm @ 10A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 65 nC @ 10 VVgs(Max): ±25VInputCapacitance(Ciss)(Max)@Vds: 1960 pF @ 15 VFETFeature: -PowerDissipation(Max): 2.5W (Ta), 5.6W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOICSI4835DDY-T1-GE3 | Vishay | NHE Electronics
SI4835DDY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
