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SI4850BDY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 8.4A/11.3A 8SO
Product Attributes：
Part Number: SI4850BDY-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 8.4A/11.3A 8SO
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4850BDY-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI4850BDY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 8.4A/11.3A 8SOProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 8.4A (Ta), 11.3A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 19.5mOhm @ 10A, 10VVgs(th)(Max)@Id: 2.8V @ 250µAGateCharge(Qg)(Max)@Vgs: 17 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 790 pF @ 30 VFETFeature: -PowerDissipation(Max): 2.5W (Ta), 4.5W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOSI4850BDY-T1-GE3 | Vishay | NHE Electronics
SI4850BDY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
