Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI4866BDY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 12V 21.5A 8SO
Product Attributes：
Part Number: SI4866BDY-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 12V 21.5A 8SO
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4866BDY-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 820NH 450MA 500MOHM SM
FIXED IND 4.7UH 9.5A 14.2MOHM SM
SENSOR REMOTE REC 30.0KHZ 45M
TVS DIODE 185VWM 328VC 1.5KE
MOSFET P-CH 20V 3.5A 1206-8
DIODE ZENER 15V 800MW DO219AB
Product Specifications：
MfrPart.: SI4866BDY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 12V 21.5A 8SOProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 12 VCurrent-ContinuousDrain(Id)@25°C: 21.5A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 5.3mOhm @ 12A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 80 nC @ 4.5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 5020 pF @ 6 VFETFeature: -PowerDissipation(Max): 2.5W (Ta), 4.45W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOICSI4866BDY-T1-GE3 | Vishay | NHE Electronics
SI4866BDY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
