Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI4866DY-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 12V 11A 8SO
Product Attributes:
Part Number: SI4866DY-T1-E3
Manufacturer: Vishay
Description: MOSFET N-CH 12V 11A 8SO
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4866DY-T1-E3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ZENER 3.6V 350MW SOT23-3
TVS DIODE 342VWM 548VC 1.5KE
BRIDGE RECT 1PHASE 800V 1A DFS
TVS DIODE 15VWM 26.9VC DO214AB
NTC MINI LUG 47K 3% CONNECTOR E3
FIXED IND 8.2UH 20A 6.14 MOHM TH
Product Specifications:
MfrPart.: SI4866DY-T1-E3Mfr: Vishay SiliconixDescription: MOSFET N-CH 12V 11A 8SOProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 12 VCurrent-ContinuousDrain(Id)@25°C: 11A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 4.5VRdsOn(Max)@IdVgs: 5.5mOhm @ 17A, 4.5VVgs(th)(Max)@Id: 600mV @ 250µA (Min)GateCharge(Qg)(Max)@Vgs: 30 nC @ 4.5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 1.6W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOICSI4866DY-T1-E3 | Vishay | NHE Electronics
SI4866DY-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.