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SI4936BDY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET 2N-CH 30V 6.9A 8-SOIC
Product Attributes:
Part Number: SI4936BDY-T1-GE3
Manufacturer: Vishay
Description: MOSFET 2N-CH 30V 6.9A 8-SOIC
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
SI4936BDY-T1-GE3 Datasheet (PDF)
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Product Specifications:
MfrPart.: SI4936BDY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET 2N-CH 30V 6.9A 8-SOICProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - ArraysPackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: 2 N-Channel (Dual)FETFeature: Logic Level GateDraintoSourceVoltage(Vdss): 30VCurrent-ContinuousDrain(Id)@25°C: 6.9ARdsOn(Max)@IdVgs: 35mOhm @ 5.9A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 15nC @ 10VInputCapacitance(Ciss)(Max)@Vds: 530pF @ 15VPower-Max: 2.8WOperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountPackage/Case: 8-SOIC (0.154, 3.90mm Width)SI4936BDY-T1-GE3 | Vishay | NHE Electronics
SI4936BDY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.