Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI4972DY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET 2N-CH 30V 10.8A 8-SOIC
Product Attributes:
Part Number: SI4972DY-T1-GE3
Manufacturer: Vishay
Description: MOSFET 2N-CH 30V 10.8A 8-SOIC
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
SI4972DY-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 30.8VWM 49.9VC DO214AC
DIODE SCHOTTKY 35V 10A TO263AB
TVS DIODE 10.2VWM 16.7VC DO214AC
MOSFET N-CH 20V 100A TO252AA
DIODE GEN PURP 200V 1A DO204AL
Product Specifications:
MfrPart.: SI4972DY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET 2N-CH 30V 10.8A 8-SOICProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - ArraysPackage: Tape & Reel (TR)Series: TrenchFET®PartStatus: ObsoleteFETType: 2 N-Channel (Dual)FETFeature: StandardDraintoSourceVoltage(Vdss): 30VCurrent-ContinuousDrain(Id)@25°C: 10.8A, 7.2ARdsOn(Max)@IdVgs: 14.5mOhm @ 6A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 28nC @ 10VInputCapacitance(Ciss)(Max)@Vds: 1080pF @ 15VPower-Max: 3.1W, 2.5WOperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountPackage/Case: 8-SOIC (0.154, 3.90mm Width)SI4972DY-T1-GE3 | Vishay | NHE Electronics
SI4972DY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.