Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI5419DU-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 12A PPAK CHIPFET
Product Attributes:
Part Number: SI5419DU-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 12A PPAK CHIPFET
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI5419DU-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 36.8VWM 59.3VC DO214AA
OPTOISO 4KV OPEN DRAIN 8SOIC
N-CHANNEL 100 V (D-S) MOSFET POW
TVS DIODE 40.2VWM 64.8VC DO204AL
FIXED IND 390UH 100MA 10 OHM TH
Product Specifications:
MfrPart.: SI5419DU-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 12A PPAK CHIPFETProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 12A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 20mOhm @ 6.6A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 45 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1400 pF @ 15 VFETFeature: -PowerDissipation(Max): 3.1W (Ta), 31W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® ChipFET™ SingleSI5419DU-T1-GE3 | Vishay | NHE Electronics
SI5419DU-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.