Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI5499DC-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 8V 6A 1206-8 CHIPFET
Product Attributes：
Part Number: SI5499DC-T1-E3
Manufacturer: Vishay
Description: MOSFET P-CH 8V 6A 1206-8 CHIPFET
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI5499DC-T1-E3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
OPTOISOLATR 5KV TRANSISTOR 4-SMD
EVAL KIT CHIP ANTENNA VJ5601M915
MOSFET N-CH 30V 3.3A/3.6A SOT23
SFERNICE POTENTIOMETERS & TRIMME
DIODE SCHOTTKY 60V 3A TO277A
TVS DIODE 15.3VWM 25.2VC SMC
Product Specifications：
MfrPart.: SI5499DC-T1-E3Mfr: Vishay SiliconixDescription: MOSFET P-CH 8V 6A 1206-8 CHIPFETProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 8 VCurrent-ContinuousDrain(Id)@25°C: 6A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.5V, 4.5VRdsOn(Max)@IdVgs: 36mOhm @ 5.1A, 4.5VVgs(th)(Max)@Id: 800mV @ 250µAGateCharge(Qg)(Max)@Vgs: 35 nC @ 8 VVgs(Max): ±5VInputCapacitance(Ciss)(Max)@Vds: 1290 pF @ 4 VFETFeature: -PowerDissipation(Max): 2.5W (Ta), 6.2W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 1206-8 ChipFET™SI5499DC-T1-E3 | Vishay | NHE Electronics
SI5499DC-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
