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SI5509DC-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET N/P-CH 20V 6.1A 1206-8
Product Attributes：
Part Number: SI5509DC-T1-GE3
Manufacturer: Vishay
Description: MOSFET N/P-CH 20V 6.1A 1206-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
SI5509DC-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI5509DC-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N/P-CH 20V 6.1A 1206-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - ArraysPackage: Tape & Reel (TR)Series: TrenchFET®PartStatus: ObsoleteFETType: N and P-ChannelFETFeature: Logic Level GateDraintoSourceVoltage(Vdss): 20VCurrent-ContinuousDrain(Id)@25°C: 6.1A, 4.8ARdsOn(Max)@IdVgs: 52mOhm @ 5A, 4.5VVgs(th)(Max)@Id: 2V @ 250µAGateCharge(Qg)(Max)@Vgs: 6.6nC @ 5VInputCapacitance(Ciss)(Max)@Vds: 455pF @ 10VPower-Max: 4.5WOperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountPackage/Case: 8-SMD, Flat LeadSI5509DC-T1-GE3 | Vishay | NHE Electronics
SI5509DC-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
