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SI5513DC-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET N/P-CH 20V 3.1A 1206-8
SI5513DC-T1-GE3 Images
SI5513DC-T1-GE3 Images
Product Attributes:
  • Part Number: SI5513DC-T1-GE3
  • Manufacturer: Vishay
  • Description: MOSFET N/P-CH 20V 3.1A 1206-8
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • SI5513DC-T1-GE3 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: SI5513DC-T1-GE3
  • Mfr: Vishay Siliconix
  • Description: MOSFET N/P-CH 20V 3.1A 1206-8
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • Package: Tape & Reel (TR)
  • Series: TrenchFET®
  • PartStatus: Obsolete
  • FETType: N and P-Channel
  • FETFeature: Logic Level Gate
  • DraintoSourceVoltage(Vdss): 20V
  • Current-ContinuousDrain(Id)@25°C: 3.1A, 2.1A
  • RdsOn(Max)@IdVgs: 75mOhm @ 3.1A, 4.5V
  • Vgs(th)(Max)@Id: 1.5V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 6nC @ 4.5V
  • InputCapacitance(Ciss)(Max)@Vds: -
  • Power-Max: 1.1W
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: 8-SMD, Flat Lead
  • SI5513DC-T1-GE3 | Vishay | NHE Electronics
  • SI5513DC-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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