Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI5855CDC-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 3.7A 1206-8
Product Attributes：
Part Number: SI5855CDC-T1-E3
Manufacturer: Vishay
Description: MOSFET P-CH 20V 3.7A 1206-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI5855CDC-T1-E3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 1.4KV 800MA SOD57
DIODE SCHOTTKY 60V 1A DO219AB
BRIDGE RECT 1PHASE 800V 3.9A GBU
FIXED IND 120NH 1.53A 34 MOHM TH
TVS DIODE 85VWM 137VC DO214AB
Product Specifications：
MfrPart.: SI5855CDC-T1-E3Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 3.7A 1206-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: LITTLE FOOT®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 3.7A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 144mOhm @ 2.5A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 6.8 nC @ 5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 276 pF @ 10 VFETFeature: Schottky Diode (Isolated)PowerDissipation(Max): 1.3W (Ta), 2.8W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 1206-8 ChipFET™SI5855CDC-T1-E3 | Vishay | NHE Electronics
SI5855CDC-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
