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SI5855DC-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 2.7A 1206-8
Product Attributes：
Part Number: SI5855DC-T1-E3
Manufacturer: Vishay
Description: MOSFET P-CH 20V 2.7A 1206-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI5855DC-T1-E3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI5855DC-T1-E3Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 2.7A 1206-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 2.7A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 110mOhm @ 2.7A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 7.7 nC @ 4.5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: Schottky Diode (Isolated)PowerDissipation(Max): 1.1W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 1206-8 ChipFET™SI5855DC-T1-E3 | Vishay | NHE Electronics
SI5855DC-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
