Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI6410DQ-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 8TSSOP
Product Attributes：
Part Number: SI6410DQ-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 8TSSOP
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI6410DQ-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ZENER 11V 500MW SOD80
VDR US 14D 8000A 320V STLDS BULK
FIXED IND 820NH 450MA 500MOHM SM
FIXED IND 6.8UH 2.4A 150MOHM SMD
VDR US 14D 8000A 140V STLDS
DIODE GEN PURP 100V 1A DO214AC
Product Specifications：
MfrPart.: SI6410DQ-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 8TSSOPProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 7.8A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 14mOhm @ 7.8A, 10VVgs(th)(Max)@Id: 1V @ 250µA (Min)GateCharge(Qg)(Max)@Vgs: 33 nC @ 5 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 1.5W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-TSSOPSI6410DQ-T1-GE3 | Vishay | NHE Electronics
SI6410DQ-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
