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SI6473DQ-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 6.2A 8TSSOP
SI6473DQ-T1-GE3 Images
SI6473DQ-T1-GE3 Images
Product Attributes:
  • Part Number: SI6473DQ-T1-GE3
  • Manufacturer: Vishay
  • Description: MOSFET P-CH 20V 6.2A 8TSSOP
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • SI6473DQ-T1-GE3 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: SI6473DQ-T1-GE3
  • Mfr: Vishay Siliconix
  • Description: MOSFET P-CH 20V 6.2A 8TSSOP
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR)
  • Series: TrenchFET®
  • PartStatus: Obsolete
  • FETType: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 20 V
  • Current-ContinuousDrain(Id)@25°C: 6.2A (Ta)
  • DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5V
  • RdsOn(Max)@IdVgs: 12.5mOhm @ 9.5A, 4.5V
  • Vgs(th)(Max)@Id: 450mV @ 250µA (Min)
  • GateCharge(Qg)(Max)@Vgs: 70 nC @ 5 V
  • Vgs(Max): ±8V
  • InputCapacitance(Ciss)(Max)@Vds: -
  • FETFeature: -
  • PowerDissipation(Max): 1.08W (Ta)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: 8-TSSOP
  • SI6473DQ-T1-GE3 | Vishay | NHE Electronics
  • SI6473DQ-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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