Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7100DN-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 8V 35A PPAK1212-8
Product Attributes:
Part Number: SI7100DN-T1-E3
Manufacturer: Vishay
Description: MOSFET N-CH 8V 35A PPAK1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7100DN-T1-E3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 3.3UH 5A 54.7MOHM SMD
TVS DIODE 4VWM 14.3VC LLP75-3B
MOSFET P-CH 150V 3A PPAK SO-8
DIODE SCHOTTKY 20V 3A DO214AB
Product Specifications:
MfrPart.: SI7100DN-T1-E3Mfr: Vishay SiliconixDescription: MOSFET N-CH 8V 35A PPAK1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: TrenchFET®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 8 VCurrent-ContinuousDrain(Id)@25°C: 35A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 4.5VRdsOn(Max)@IdVgs: 3.5mOhm @ 15A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 105 nC @ 8 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 3810 pF @ 4 VFETFeature: -PowerDissipation(Max): 3.8W (Ta), 52W (Tc)OperatingTemperature: -50°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SI7100DN-T1-E3 | Vishay | NHE Electronics
SI7100DN-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.