Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7112DN-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 11.3A PPAK1212-8
Product Attributes:
Part Number: SI7112DN-T1-E3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 11.3A PPAK1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7112DN-T1-E3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 185VWM 328VC DO214AA
FIXED IND 1UH 3.8A 33 MOHM SMD
DIODE SCHOTTKY 45V 10A TO277A
FIXED IND 820NH 24A 2.6 MOHM SMD
DIODE ZENER 4.3V 300MW SOT23-3
MOSFET N-CH 400V 10A D2PAK
Product Specifications:
MfrPart.: SI7112DN-T1-E3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 11.3A PPAK1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 11.3A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 7.5mOhm @ 17.8A, 10VVgs(th)(Max)@Id: 1.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 27 nC @ 4.5 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: 2610 pF @ 15 VFETFeature: -PowerDissipation(Max): 1.5W (Ta)OperatingTemperature: -50°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SI7112DN-T1-E3 | Vishay | NHE Electronics
SI7112DN-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.