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SI7119DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 200V 3.8A PPAK1212-8
Product Attributes：
Part Number: SI7119DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 200V 3.8A PPAK1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7119DN-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI7119DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 200V 3.8A PPAK1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 200 VCurrent-ContinuousDrain(Id)@25°C: 3.8A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 1.05Ohm @ 1A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 25 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 666 pF @ 50 VFETFeature: -PowerDissipation(Max): 3.7W (Ta), 52W (Tc)OperatingTemperature: -50°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SI7119DN-T1-GE3 | Vishay | NHE Electronics
SI7119DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
