Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7153DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 18A PPAK1212-8
Product Attributes:
Part Number: SI7153DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 18A PPAK1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7153DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 26VWM 46.6VC DO214AC
FIXED IND 68UH 185MA 2.9 OHM TH
TVS DIODE 23.1VWM 37.5VC 1.5KE
MOSFET N-CH 500V 2.5A I2PAK
TVS DIODE 14VWM 23.2VC DO215AB
Product Specifications:
MfrPart.: SI7153DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 18A PPAK1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: -PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 18A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 9.5mOhm @ 20A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 93 nC @ 10 VVgs(Max): ±25VInputCapacitance(Ciss)(Max)@Vds: 3600 pF @ 15 VFETFeature: -PowerDissipation(Max): 52W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SI7153DN-T1-GE3 | Vishay | NHE Electronics
SI7153DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.