Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7178DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 60A PPAK SO-8
Product Attributes:
Part Number: SI7178DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 100V 60A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7178DP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 390NH 1.8A 80 MOHM TH
DIODE GEN PURP 150V 2A DO214AB
SFERNICE POTENTIOMETERS & TRIMME
DIODE ZENER 33V 1.5W DO214AA
IC SWITCH SP4T SINGLE 10MSOP
TVS DIODE 9VWM 15.4VC DO214AA
Product Specifications:
MfrPart.: SI7178DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 100V 60A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 60A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 14mOhm @ 10A, 10VVgs(th)(Max)@Id: 4.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 72 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2870 pF @ 50 VFETFeature: -PowerDissipation(Max): 6.25W (Ta), 104W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SI7178DP-T1-GE3 | Vishay | NHE Electronics
SI7178DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.