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SI7190DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 250V 18.4A PPAK SO-8
Product Attributes：
Part Number: SI7190DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 250V 18.4A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7190DP-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI7190DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 250V 18.4A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 250 VCurrent-ContinuousDrain(Id)@25°C: 18.4A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 118mOhm @ 4.4A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 72 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2214 pF @ 125 VFETFeature: -PowerDissipation(Max): 5.4W (Ta), 96W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SI7190DP-T1-GE3 | Vishay | NHE Electronics
SI7190DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
