Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7230DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 9A PPAK 1212-8
Product Attributes:
Part Number: SI7230DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 9A PPAK 1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7230DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 54VWM 87.1VC DO214AC
FIXED IND 180UH 830MA 362MOHM TH
DIODE ZENER 9.1V 500MW DO35
FIXED IND 180UH 111MA 5.72OHM SM
FIXED IND 470NH 12.2A 7.04 MOHM
TVS DIODE 54VWM 96.3VC DO204AC
Product Specifications:
MfrPart.: SI7230DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 9A PPAK 1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 9A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 12mOhm @ 14A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 20 nC @ 5 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 1.5W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SI7230DN-T1-GE3 | Vishay | NHE Electronics
SI7230DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.