Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7309DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 60V 8A PPAK1212-8
Product Attributes:
Part Number: SI7309DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 60V 8A PPAK1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7309DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ARRAY SCHOTTKY 60V TO220AB
DIODE GEN PURP 300V 500MA DO213
DIODE ZENER 9.1V 1W DO213AB
DIODE ZENER 47V 800MW DO219AB
MOSFET N-CH 30V 60A PPAK SO-8
MOSFET 2N-CH 30V 8A 8SOIC
Product Specifications:
MfrPart.: SI7309DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 60V 8A PPAK1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 8A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 115mOhm @ 3.9A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 22 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 600 pF @ 30 VFETFeature: -PowerDissipation(Max): 3.2W (Ta), 19.8W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SI7309DN-T1-GE3 | Vishay | NHE Electronics
SI7309DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.