Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7317DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 150V 2.8A PPAK1212-8
Product Attributes：
Part Number: SI7317DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 150V 2.8A PPAK1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7317DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 100NH 1.35A 80 MOHM TH
DIODE GEN PURP 600V 1A MPG06
TVS DIODE 9VWM 15.4VC DO214AC
MOSFET N-CH 500V 38A SOT-227
SFERNICE POTENTIOMETERS & TRIMME
Product Specifications：
MfrPart.: SI7317DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 150V 2.8A PPAK1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 150 VCurrent-ContinuousDrain(Id)@25°C: 2.8A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 1.2Ohm @ 500mA, 10VVgs(th)(Max)@Id: 4.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 9.8 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 365 pF @ 75 VFETFeature: -PowerDissipation(Max): 3.2W (Ta), 19.8W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SI7317DN-T1-GE3 | Vishay | NHE Electronics
SI7317DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
