Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7370DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 9.6A PPAK SO-8
Product Attributes:
Part Number: SI7370DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 9.6A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7370DP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 28VWM 45.4VC DO214AC
DIODE ZENER 30V 500MW SOD123
MOSFET P-CH 50V 9.9A TO251AA
MOSFET P-CH 20V 7.5A/8A 6TSOP
DIODE ZENER 8.2V 500MW SOD80
FIXED IND 180NH 450MA 350MOHM SM
Product Specifications:
MfrPart.: SI7370DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 9.6A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 9.6A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 11mOhm @ 12A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 57 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 1.9W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SI7370DP-T1-GE3 | Vishay | NHE Electronics
SI7370DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.