Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7405BDN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 12V 16A PPAK1212-8
Product Attributes：
Part Number: SI7405BDN-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 12V 16A PPAK1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7405BDN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
ADJ PWR RES 1.5 OHM 140W CHAS MT
FIXED IND 10UH 5.1A 53.5MOHM SMD
DIODE GEN PURP 1KV 1A DO204AL
TVS DIODE 11.1VWM 18.2VC DO214AA
TVS DIODE 7.5VWM 14.3VC DO204AC
FIXED IND 2.7UH 370MA 750MOHM SM
Product Specifications：
MfrPart.: SI7405BDN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 12V 16A PPAK1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 12 VCurrent-ContinuousDrain(Id)@25°C: 16A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 13mOhm @ 13.5A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 115 nC @ 8 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 3500 pF @ 6 VFETFeature: -PowerDissipation(Max): 3.6W (Ta), 33W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SI7405BDN-T1-GE3 | Vishay | NHE Electronics
SI7405BDN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
