Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7465DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 60V 3.2A PPAK SO-8
Product Attributes：
Part Number: SI7465DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7465DP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 2.2UH 3.25A 68MOHM SMD
TVS DIODE 12.1VWM 22VC DO220AA
DIODE ZENER 43V 300MW SOT23-3
TVS DIODE 5.8VWM 10.5VC DO214AB
DIODE GEN PURP 400V 40A DO203AB
TVS DIODE 40VWM 64.5VC DO214AA
Product Specifications：
MfrPart.: SI7465DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 60V 3.2A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 3.2A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 64mOhm @ 5A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 40 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 1.5W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SI7465DP-T1-GE3 | Vishay | NHE Electronics
SI7465DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
