Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7613DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 35A PPAK1212-8
Product Attributes:
Part Number: SI7613DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 20V 35A PPAK1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7613DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
SFERNICE POTENTIOMETERS & TRIMME
TVS DIODE 120VWM 193VC DO214AC
TVS DIODE 11VWM 18.2VC P600
TVS DIODE 13VWM 21.5VC DO214AB
TVS DIODE 33.3VWM 53.9VC DO214AC
Product Specifications:
MfrPart.: SI7613DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 35A PPAK1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 35A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 8.7mOhm @ 17A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 87 nC @ 10 VVgs(Max): ±16VInputCapacitance(Ciss)(Max)@Vds: 2620 pF @ 10 VFETFeature: -PowerDissipation(Max): 3.8W (Ta), 52.1W (Tc)OperatingTemperature: -50°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SI7613DN-T1-GE3 | Vishay | NHE Electronics
SI7613DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.