Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7703EDN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 4.3A PPAK1212-8
Product Attributes：
Part Number: SI7703EDN-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 20V 4.3A PPAK1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7703EDN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
IC ANALOG SWITCH CMOS 8MSOP
SCR DBL 2SCR 1600V 75A ADD-A-PAK
TVS DIODE 15VWM 24.4VC DO214AA
FIXED IND 36UH 180MA 2.5 OHM TH
MOSFET P-CH 30V 50A TO220AB
Product Specifications：
MfrPart.: SI7703EDN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 4.3A PPAK1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 4.3A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 48mOhm @ 6.3A, 4.5VVgs(th)(Max)@Id: 1V @ 800µAGateCharge(Qg)(Max)@Vgs: 18 nC @ 4.5 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: Schottky Diode (Isolated)PowerDissipation(Max): 1.3W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SI7703EDN-T1-GE3 | Vishay | NHE Electronics
SI7703EDN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
