Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7726DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 35A PPAK1212-8
Product Attributes：
Part Number: SI7726DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 35A PPAK1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7726DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 36.8VWM 59.3VC DO214AA
OPTOISO 4KV OPEN DRAIN 8SOIC
TVS DIODE 16.2VWM 29.1VC DO204AC
IC SWITCH SPDT DUAL 10DFN
TVS DIODE 40.2VWM 64.8VC DO204AL
Product Specifications：
MfrPart.: SI7726DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 35A PPAK1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: SkyFET®, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 35A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 9.5mOhm @ 10A, 10VVgs(th)(Max)@Id: 2.6V @ 250µAGateCharge(Qg)(Max)@Vgs: 43 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1765 pF @ 15 VFETFeature: -PowerDissipation(Max): 3.8W (Ta), 52W (Tc)OperatingTemperature: -50°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SI7726DN-T1-GE3 | Vishay | NHE Electronics
SI7726DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
