Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7742DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 60A PPAK SO-8
Product Attributes：
Part Number: SI7742DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 60A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7742DP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
MOSFET P-CH 30V 1.9A SC70-6
TVS DIODE 24VWM 47VC SOT23-3
DIODE GEN PURP 600V 3A DO201AD
DIODE SCHOTTKY 30V 4A DO214AB
FIXED IND 3.6MH 57MA 40 OHM TH
MOSFET N-CH 200V 5.2A TO220AB
Product Specifications：
MfrPart.: SI7742DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 60A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: SkyFET®, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 60A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 3.5mOhm @ 20A, 10VVgs(th)(Max)@Id: 2.7V @ 250µAGateCharge(Qg)(Max)@Vgs: 115 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 5300 pF @ 15 VFETFeature: -PowerDissipation(Max): 5.4W (Ta), 83W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SI7742DP-T1-GE3 | Vishay | NHE Electronics
SI7742DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
