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SI7792DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 40.6A/60A PPAK
Product Attributes：
Part Number: SI7792DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 40.6A/60A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7792DP-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI7792DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 40.6A/60A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: SkyFET®, TrenchFET® Gen IIIPartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 40.6A (Ta), 60A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 2.1mOhm @ 20A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 135 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 4.735 nF @ 15 VFETFeature: Schottky Diode (Body)PowerDissipation(Max): 6.25W (Ta), 104W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SI7792DP-T1-GE3 | Vishay | NHE Electronics
SI7792DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
