Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7884BDP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 40V 58A PPAK SO-8
Product Attributes：
Part Number: SI7884BDP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 40V 58A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7884BDP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
ADJ PWR RES 47 OHM 280W CHAS MT
DIODE SCHOTTKY 80V 8A D2PAK
TVS DIODE 12.8VWM 21.2VC TO277A
TVS DIODE 6.5VWM 11.2VC DO214AC
NTC LUG01A 10K 1% 3435K G24 80MM
DIODE GEN PURP 600V 40A DO203AB
Product Specifications：
MfrPart.: SI7884BDP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 40V 58A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 40 VCurrent-ContinuousDrain(Id)@25°C: 58A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 7.5mOhm @ 16A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 77 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 3540 pF @ 20 VFETFeature: -PowerDissipation(Max): 4.6W (Ta), 46W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SI7884BDP-T1-GE3 | Vishay | NHE Electronics
SI7884BDP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
