Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7898DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 150V 3A PPAK SO-8
Product Attributes:
Part Number: SI7898DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 150V 3A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7898DP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE SCHOTTKY 80V 8A D2PAK
DIODE GEN PURP 1KV 70A DO203AB
TVS DIODE 11VWM 20.1VC DO218AB
FIXED IND 680NH 495MA 600MOHM TH
DIODE ARRAY SCHOTTKY 150V TO263
DIODE GEN PURP 100V 8A TO263AB
Product Specifications:
MfrPart.: SI7898DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 150V 3A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 150 VCurrent-ContinuousDrain(Id)@25°C: 3A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 85mOhm @ 3.5A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 21 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 1.9W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SI7898DP-T1-GE3 | Vishay | NHE Electronics
SI7898DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.